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Texas Instruments CSD87502Q2T의 평가 키트와 참조 설계를 확인하세요.
관련 부품
InfineonIRLML0030TRPBF
Transistor: N-MOSFET; unipolar; 30V; 5.3A; 27ohm; 1.3W; -55+150 deg.C; SMD; SOT23
설명
유통업체에서 제공한 Texas Instruments CSD87502Q2T에 대한 설명입니다.
Dual N-Ch MOSFET 30V 5A 2.3W 32.4mΩ@4A,10V 353pF@15V 2V@250µA 6nC@10V SON SMD 2mm × 2mm × 750μm
30-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2, 42 mOhm, gate ESD protection 6-WSON -55 to 150
MOSFET 2N-CH 30V 5A 6WSON / Mosfet Array 2 N-Channel (Dual) 30V 5A 2.3W Surface Mount 6-WSON (2x2)
Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Csd87502Q2T Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD87502Q2T
MOSFET, DUAL N-CH, 30V, WSON-6
6-Terminal Dual Synchronous Power Module
MOS Power Transistors LV (< 200V)
MOSFET, DUAL N-CH, 30V, WSON-6; Polarité transistor: Double canal N; Courant de drain Id: 5A; Tension Vds max..: 30V; Résistance Rds(on): 0.027ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.6V; Dissipation de puissance
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기술 사양
Physical
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance353 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.3 W
Min Operating Temperature-55 °C
Number of Channels2
PackagingTape & Reel (TR)
Power Dissipation2.3 W
Rds On Max32.4 mΩ
Schedule B8541290080
Threshold Voltage1.6 V
Turn-Off Delay Time12 ns
Turn-On Delay Time3 ns
Dimensions
Height800 µm
Length2 mm
Thickness750 µm
Width2 mm