가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | DMN3404L-7 | 78,000 | 3K | Tape & Reel | ||||||||
| TME | DMN3404L-7 | 0 | 1 | 13h | ||||||||
| Newark | DMN3404L-7 | 0 | 5 | Cut Tape | ||||||||
| Conrad | 3409526 | 2,658 | 21h | |||||||||
| RS (Formerly Allied Electronics) | DMN3404L-7 | 0 | 3K | Bulk | 1d |
대체 부품
Price @ 1000
$ 0.102
$ 0.213
Stock
6,936,001
9,584,567
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
2 A
2 A
Threshold Voltage
1.5 V
-
Rds On Max
28 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
720 mW
-
Input Capacitance
386 pF
-
관련 부품
InfineonIRFML8244TRPBF
25V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
InfineonBSS316NH6327XTSA1
Power MOSFET, N Channel, 30 V, 1.4 A, 160 mOhm, SOT-23, 3 Pins, Surface Mount
InfineonBSS306NH6327XTSA1
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23
설명
유통업체에서 제공한 Diodes Inc. DMN3404L-7에 대한 설명입니다.
N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount
Trans MOSFET N-CH 30V 5.8A Automotive 3-Pin SOT-23 T/R
MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Source Voltage Vds:30V; On Resistance
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time6.18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance386 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation720 mW
Rds On Max28 mΩ
Resistance28 mΩ
Rise Time6.18 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time13.92 ns
Turn-On Delay Time3.41 ns
Dimensions
Height1.1 mm
Length2.9 mm
Width1.3 mm