onsemi FDS6912A

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 6A, 28mΩ

Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin SOIC T/R

DUAL N-CHANNEL, LOGIC LEVEL, POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET, DUAL, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6A; Package / Case:SOIC; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDS6912A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.