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엔지니어링 리소스
Texas Instruments CSD19501KCS의 평가 키트와 참조 설계를 확인하세요.
관련 부품
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Infineon N-Ch Enhancement MOSFET OptiMOS 3, Vds=80V 80A TO-220 TH 3-Pin
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Trans MOSFET N-CH 80V 80A Automotive 3-Pin(3+Tab) TO-220 Tube, PG-TO220-3, RoHS
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Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220 Tube / OptiMOS3 Power-Transistor
설명
유통업체에서 제공한 Texas Instruments CSD19501KCS에 대한 설명입니다.
80-V, N channel NexFET™ power MOSFET, single TO-220, 6.6 mOhm 3-TO-220 -55 to 175
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 100A I(D), 80V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
MOSFET, N CHANNEL, 80V, 100A, TO-220-3; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 80V; Résistance Rds(on): 0.0055ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 2.6V; Dissipation de puiss
MOSFET, N CHANNEL, 80V, 100A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:217W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019)
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- TI-ROHS
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- Texas Instruments Inc.
기술 사양
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage80 V
Drain to Source Voltage (Vds)80 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.98 nF
Max Operating Temperature175 °C
Max Power Dissipation217 W
Min Operating Temperature-55 °C
Number of Channels1
Rds On Max6.6 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage2.6 V
Turn-Off Delay Time39 ns
Turn-On Delay Time21 ns
Dimensions
Height4.7 mm
Length10.16 mm
Thickness4.58 mm
Width8.7 mm