공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-01-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTP80NF55-06
MOSFET N-CH 55V 80A TO-220 / Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube
InfineonAUIRF1010Z
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
설명
유통업체에서 제공한 onsemi FDP5800에 대한 설명입니다.
N-Channel PowerTrench® MOSFET, Logic Level, 60V, 80A, 6mΩ
60V, 80A, 6m ohom ,NCH LOGIC LEVEL POWER TRENCH MOSFET
Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) TO-220AB Rail
Avnet Japan
onsemi NMOS PowerTrench, Vds=60 V, 80 A, TO-220, , 3
MOSFETs 60V N-Ch Logic Level MOSFET
Power Field-Effect Transistor, 80A I(D), 60V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Fet 60V 6.0 Mohm To220 Rohs Compliant: Yes
60V 80A 4.6m´Î@10V80A 242W 2.5V@250uA 295pF@15V N Channel 6.89nF@15V 58nC@0~5V -55¡Í~+175¡Í@(Tj) TO-220 MOSFETs ROHS
POWER FIELD-EFFECT TRANSISTOR, 8
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:242mW; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:242mW; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)80 A
Current81 A
Current Rating14 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance12.6 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.16 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation242 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation242 W
Rds On Max6 mΩ
Resistance6 MΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time55 ns
Turn-On Delay Time18 ns
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height20.4 mm
Length9.9 mm
Width4.5 mm