공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
관련 부품
InfineonIPP037N08N3GXKSA1
Power MOSFET, N Channel, 80 V, 100 A, 0.0028 ohm, TO-220, Through Hole
STMicroelectronicsSTP140N8F7
N-channel 80 V, 3.5 mOhm typ., 90 A STripFET F7 Power MOSFET in TO-220 package
InfineonIPP057N08N3GXKSA1
MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Dr
InfineonIPP040N06N3GXKSA1
188W(Tc) 20V 4V@ 90¦ÌA 98nC@ 10 V 1N 60V 4m¦¸@ 90A,10V 11nF@30V TO-220-3 10mm*4.4mm*15.65mm
설명
유통업체에서 제공한 Infineon IPP052N08N5AKSA1에 대한 설명입니다.
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(3+Tab) TO-220 Tube, PG-TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 80A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 80V, 80A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0046Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Infineon IPP052N08N5AKSA1
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance5.2 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Dual Supply Voltage80 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.2 mΩ
Package Quantity500
Power Dissipation125 W
Rds On Max5.2 mΩ
Rise Time7 ns
Schedule B8541290080
Turn-Off Delay Time27 ns
Turn-On Delay Time17 ns
Dimensions
Height20.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책