대체 부품
Price @ 1000
$ 8.15
$ 2.468
Stock
162,346
306,354
Authorized Distributors
1
6
Mount
Through Hole
Through Hole
Case/Package
TO-247
TO-247-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
35 A
34 A
Threshold Voltage
-
-
Rds On Max
88 mΩ
88 mΩ
Gate to Source Voltage (Vgs)
30 V
25 V
Power Dissipation
255 W
-
Input Capacitance
4.2 nF
2.5 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-16
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2018-06-29
LTD Date2018-12-29
관련 부품
STMicroelectronicsSTW48NM60N
N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package
STMicroelectronicsSTW57N65M5
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in TO-247 package
InfineonIPW60R099P6XKSA1
MOSFET N-CH 600V 37.9A TO247-3 / N-Channel 600 V 37.9A (Tc) 278W (Tc) Through Hole PG-TO247-3
InfineonIPW65R080CFDAFKSA1
Power MOSFET, N Channel, 650 V, 43.3 A, 80 MilliOhms, TO-247, 3 Pins, Through Hole
설명
유통업체에서 제공한 STMicroelectronics STW43NM60N에 대한 설명입니다.
N-channel 600V - 0.075Y - 35A - TO-247 second generation MDmesh™ Power MOSFET
MOSFET Transistor, N Channel, 17.5 A, 600 V, 75 mohm, 10 V, 3 V
N-CHANNEL 600 V-0.075 OHM-35 A-TO-247 SECOND GENERATION MDMESH POWER MOSFET Power Field-Effect Transistor, 35A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:255W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:35A; Package / Case:TO-247; Power Dissipation Pd:255W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
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- STM
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- SGS THOMSON
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- STMICROE
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- STMICR
- ST MIC
- ST MICROELECTRONIC
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- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.2 nF
Max Operating Temperature150 °C
Max Power Dissipation255 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation255 W
Rds On Max88 mΩ
Resistance88 mΩ
Rise Time45 ns
Turn-Off Delay Time130 ns
Turn-On Delay Time25 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm