공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-18
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTW43NM60ND
N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) Power MOSFET (with fast diode)
STMicroelectronicsSTW60N65M5
N-channel 650 V, 0.049 Ohm, 46 A MDmesh(TM) V Power MOSFET in TO-247
STMicroelectronicsSTW55NM60ND
Mosfet Transistor, N Channel, 51 A, 600 V, 0.047 Ohm, 10 V, 4 V Rohs Compliant: Yes
설명
유통업체에서 제공한 STMicroelectronics STW48NM60N에 대한 설명입니다.
N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package
STW48NM60N N-CHANNEL MOSFET TRANSISTOR, 39 A, 600 V, 3-PIN TO-247
Single N-Channel 600 V 0.07 Ohm 330 W Mdmesh Flange Mount Mosfet - TO-247-3
600 V, 39 A, 0.055 OHM TO-247 N-CHANNEL MDMESH II POWER MOSFET Power Field-Effect Transistor, 39A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Mosfet, N Ch, 600V, 39A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:39A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STW48NM60N
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)39 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25.5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.285 nF
Max Operating Temperature150 °C
Max Power Dissipation255 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation255 W
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time18 ns
Threshold Voltage3.2 V
Turn-Off Delay Time214 ns
Turn-On Delay Time99 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm