관련 부품
InfineonIPS65R1K0CEAKMA1
MOSFET N-CH 650V 4.3A TO251 / N-Channel 650 V 4.3A (Tc) 37W (Tc) Through Hole TO-251
설명
유통업체에서 제공한 STMicroelectronics STU6N65M2에 대한 설명입니다.
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
STMICROELECTRONICS STU6N65M2 Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
Power Field-Effect Transistor, 4A I(D), 650V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N CHANNEL, 650V, 4A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
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- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
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- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight3.949996 g
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1.35 Ω
Drain to Source Voltage (Vdss)650 V
Fall Time20 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance226 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max1.35 Ω
Resistance1.2 Ω
Rise Time7 ns
Threshold Voltage3 V
Turn-Off Delay Time6.5 ns
Turn-On Delay Time19 ns