가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | STU3LN62K3 | 0 | 25 | Bulk | 22h | |||||||
| Farnell | STU3LN62K3 | 0 | 1 | 1d | ||||||||
| Microchip USA | STU3LN62K3 | 257 | 3500 | Tray | 22h | |||||||
| Component Stockers USA | STU3LN62K3 | 1 | 20h | |||||||||
| Win Source | WS-STU3LN62K3 | 45,000 | 50 | 7h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-02-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-01-10
LTD Date2021-07-10
관련 부품
STMicroelectronicsSTD3NK50Z-1
STMICROELECTRONICS STD3NK50Z-1 MOSFET Transistor, N Channel, 1.15 A, 500 V, 2.8 ohm, 10 V, 3.75 V
설명
유통업체에서 제공한 STMicroelectronics STU3LN62K3에 대한 설명입니다.
N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3™ Power MOSFET DPAK, TO-220FP, TO-220, IPAK
N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET IPAK
620 V, 2.5 A, 2.5 OHM N-CHANNEL SUPERMESH3 POWER MOSFET IPAK Power Field-Effect Transistor, 2.5A I(D), 620V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N CH, 620V, 2.5A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:620V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance386 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation45 W
Rds On Max3 Ω
Resistance3 Ω
Rise Time7 ns
Threshold Voltage3.75 V
Turn-Off Delay Time30 ns
Turn-On Delay Time9 ns
Dimensions
Height6.9 mm
Length6.6 mm
Width2.4 mm