공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-09
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2021-01-10
LTD Date2021-07-10
관련 부품
STMicroelectronicsSTD2NK60Z-1
N-channel 600 V, 7.2 Ohm, 1.4 A Zener-protected SuperMESH(TM) MOSFET in a IPAK package
설명
유통업체에서 제공한 STMicroelectronics STU1HN60K3에 대한 설명입니다.
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
STU1HN60K3 N-channel MOSFET Transistor, 1.2 A, 600 V, 3-Pin IPAK
27W(Tc) 30V 4.5V@ 50¦ÌA 9.5nC@ 10 V 1N 600V 8¦¸@ 600mA,10V 1.2A 140pF@50V IPAK,TO-251
Trans MOSFET N-CH 600V 1.2A 3-Pin(3+Tab) IPAK Tube
Power Field-Effect Transistor, 0.76A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)760 mA
Drain to Source Resistance8 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance140 pF
Max Operating Temperature150 °C
Max Power Dissipation27 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation27 W
Rds On Max8 Ω
Rise Time10 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time7 ns
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm