설명
유통업체에서 제공한 STMicroelectronics STD2NC45-1에 대한 설명입니다.
N-CHANNEL 450V 4.1OHM 1.5A IPAK SuperMESH POWER MOSFET
Trans MOSFET N-CH 450V 1.5A 3-Pin(3+Tab) IPAK Tube
Hv Mosfet Planar |Stmicroelectronics STD2NC45-1
30W(Tc) 30V 3.7V@ 250¦ÌA 7nC@ 10 V 1N 450V 4.5¦¸@ 500mA,10V 1.5A 160pF@25V IPAK,TO-251 6.6mm*2.4mm*6.2mm
Power Field-Effect Transistor, 1.5A I(D), 450V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Power MOSFETs, 450V, 1.5A, IPAK, Tube
STMicroelectronics SCT
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:450V; On Resistance Rds(on):4.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:30W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:1.5A; Current Temperature:25°C; Fall Time tf:12ns; Full Power Rating Temperature:25°C; Package / Case:IPAK; Power Dissipation Pd:30W; Power Dissipation Pd:30W; Power Dissipation Ptot Max:30W; Pulse Current Idm:6A; Rise Time:4ns; Termination Type:Through Hole; Turn Off Time:8.5ns; Turn On Time:6.7ns; Voltage Vds:450V; Voltage Vds Typ:450V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.5 A
Drain to Source Breakdown Voltage450 V
Drain to Source Resistance4.5 Ω
Drain to Source Voltage (Vdss)450 V
Dual Supply Voltage450 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance160 pF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage450 V
Min Operating Temperature-65 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation30 W
Rds On Max4.5 Ω
Rise Time4 ns
Schedule B8541290080
Turn-Off Delay Time8.5 ns
Turn-On Delay Time6.7 ns