공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-01-29
관련 부품
STMicroelectronicsSTU1HN60K3
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
설명
유통업체에서 제공한 STMicroelectronics STD2NK60Z-1에 대한 설명입니다.
N-channel 600 V, 7.2 Ohm, 1.4 A Zener-protected SuperMESH(TM) MOSFET in a IPAK package
N-CHANNEL 600 V-7.2 OHM-1.4 A TO-220FP ZENER-PROTECTED SUPERMESH MOSFET Power Field-Effect Transistor, 1.5A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N, TO-251; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:1.4A; Resistance, Rds On:8ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.75V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance8 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance170 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation45 W
Rds On Max8 Ω
Rise Time30 ns
Threshold Voltage3.75 V
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm