공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-06-10
Lifecycle StatusNRND (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTU11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package
VishaySIHU7N60E-GE3
VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
STMicroelectronicsSTU13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package
STMicroelectronicsSTU10N60M2
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in IPAK package
onsemiNDD60N550U1-1G
Tube Through Hole N-Channel Single Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
onsemiNDD60N550U1-35G
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
설명
유통업체에서 제공한 STMicroelectronics STU10NM60N에 대한 설명입니다.
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in IPAK package
Single N-Channel 650 V 0.55 Ohm 19 nC 70 W MDmesh Mosfet - TO-262
70W(Tc) 25V 4V@ 250¦ÌA 19nC@ 10 V 1N 600V 550m¦¸@ 4A,10V 10A 540pF@50V IPAK,TO-251
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) IPAK Tube
MOSFET N-Channel 600V 10A IPAK
Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Power MOSFETs, 600V, 10A, IPAK, Tube
STMicroelectronics SCT
MOSFET, N CH, 600V, 8A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8 A
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance540 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max550 mΩ
Rise Time12 ns
Threshold Voltage3 V
Turn-Off Delay Time32 ns
Turn-On Delay Time10 ns
Dimensions
Height6.9 mm
Length6.6 mm
Width2.4 mm