공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-29
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2021-01-10
LTD Date2021-07-10
관련 부품
International RectifierIPU60R600C6BKMA1
MOSFET N-CH 600V 7.3A TO251-3 N-Channel 600 V 7.3A (Tc) 63W (Tc) Through Hole PG-TO251-3
STMicroelectronicsSTU12N60M2
N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in IPAK package
onsemiNDD60N550U1-1G
Tube Through Hole N-Channel Single Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
onsemiNDD60N550U1-35G
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
설명
유통업체에서 제공한 STMicroelectronics STU10N60M2에 대한 설명입니다.
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in IPAK package
STU10N60M2 N-channel MOSFET Transistor, 7.5 A, 650 V, 3-Pin IPAK
Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
85W(Tc) 25V 4V@ 250µA 13.5nC@ 10 V 1individualNChannel 600V 600mΩ@ 3A,10V 7.5A 400pF@100V IPAK，TO-251 Through hole mounting 6.2mm(height)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vds)600 V
Element ConfigurationSingle
Fall Time13.2 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max600 mΩ
Rise Time8 ns
Turn-Off Delay Time32.5 ns
Turn-On Delay Time8.8 ns
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm