공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-11
Lifecycle StatusNRND (Last Updated: 6 months ago)
관련 부품
Rochester ElectronicsSPP80N06S209
N-CHANNEL POWER MOSFET N-Channel 55 V 80A (Tc) 190W (Tc) Through Hole PG-TO220-3-1
InfineonIRFB3507PBF
MOSFET N-CH 75V 97A TO220AB N-Channel 75 V 97A (Tc) 190W (Tc) Through Hole TO-220AB
InfineonIPP80N06S407AKSA2
MOSFET N-CH 60V 80A TO220-3 N-Channel 60 V 80A (Tc) 79W (Tc) Through Hole PG-TO220-3-1
STMicroelectronicsSTP141NF55
Transistor MOSFET Negative Channel 55 Volt 80A 3-Pin(3+Tab) TO-220 Tube
InfineonSPP80N06S08AKSA1
MOSFET N-CH 55V 80A TO220-3 N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
설명
유통업체에서 제공한 STMicroelectronics STP80NF70에 대한 설명입니다.
Trans MOSFET N-CH 68V 98A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 68V 98A TO-220AB
N-channel 68 V, 0.0082 Ohm, 98 A, TO-220 STripFET II Power MOSFET
Ciiva
190W(Tc) 20V 4V@250µA 75nC@10V N-Channel 68V 9.8mΩ@40A,10V 98A 2.55nF@25V TO-220 TH 9.15mm H MOSFET
Lv Mosfet Planar & Old |Stmicroelectronics STP80NF70
Power Field-Effect Transistor, 98A I(D), 68V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power MOSFETs, N-Channel (>40V to 150V)
Power MOSFETs, 68V, 98A, TO-220, Tube
STMicroelectronics SCT
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)98 A
Drain to Source Resistance9.8 mΩ
Drain to Source Voltage (Vds)68 V
Fall Time75 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.55 nF
Max Operating Temperature175 °C
Max Power Dissipation190 W
Min Breakdown Voltage68 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max9.8 mΩ
Rise Time60 ns
Turn-Off Delay Time90 ns
Turn-On Delay Time17 ns