공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-07
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
InfineonIPP80N06S207AKSA4
55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, TO-220, OptiMOS™, PG-TO220-3, RoHS
Rochester ElectronicsSPP80N06S209
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
설명
유통업체에서 제공한 onsemi FDP3205에 대한 설명입니다.
Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-220AB Rail
150W(Tc) 5.5V@ 250¦ÌA 120nC@ 10V 1N 55V 7.5m¦¸@ 59A,10V 7.73pF@25V TO-220-3
MOSFET N-CH 55V 100A TO220-3
Power Field-Effect Transistor, 100A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Field Effect Tube (MOSFET)
N-CH/55V 100A High Qg PT3
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.73 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation150 W
Rds On Max7.5 mΩ
Rise Time147 ns
Turn-Off Delay Time42 ns