공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-01
LTD Date2009-09-01
관련 부품
InfineonIRFI3205PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 64A;TO-220 Full-Pak;PD 63W;-55de
InfineonIPP80N06S207AKSA4
55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, TO-220, OptiMOS™, PG-TO220-3, RoHS
InfineonIPP70N04S406AKSA1
40V, N-Ch, 6.5 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS
설명
유통업체에서 제공한 Rochester Electronics SPP80N06S209에 대한 설명입니다.
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB
OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SPP80N06 - OPTIMOS, 80A, 55V, 0.0091OHM,;
제조업체 별칭
Rochester Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Rochester Electronics는 다음 이름으로도 알려져 있습니다:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Resistance9.1 mΩ
Drain to Source Voltage (Vdss)55 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.14 nF
Max Operating Temperature175 °C
Max Power Dissipation190 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max9.1 mΩ
Voltage Rating (DC)55 V