공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-10
LTD Date2013-05-10
관련 부품
InfineonAUIRF1010Z
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
STMicroelectronicsSTP80N70F6
N-channel 68 V, 0.0052 Ohm, 96 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
설명
유통업체에서 제공한 STMicroelectronics STP60N55F3에 대한 설명입니다.
N-channel 55V - 6.5mY - 65A - DPAK - IPAK - D2PAK - TO-220/FP
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube
Power MOSFET Transistors N Ch 55V 6.5mohm 80A
Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMICROELECTRONICS STP60N55F3 MOSFETS
IC BUS TRANSCVR TRI-ST SOT-563
MOSFET, N, TO-220; Transistor type:MOSFET; Voltage, Vds typ:55V; Current, Id cont:80A; Resistance, Rds on:0.0085ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4V; Case style:TO-220 (SOT-78B); Current, Idm pulse:320A; Pins, No. of:3; Power dissipation:110mW; Resistance, Rds on @ Vgs = 10V:0.0085ohm; Termination Type:Through Hole; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds max:55V
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time11.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.2 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max8.5 mΩ
Resistance8.5 MΩ
Rise Time50 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time20 ns
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm