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설명
유통업체에서 제공한 STMicroelectronics STP80N70F6에 대한 설명입니다.
N-channel 68 V, 0.0052 Ohm, 96 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
Power Field-Effect Transistor, 96A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)96 A
Drain to Source Breakdown Voltage68 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)68 V
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.85 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage68 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max8 mΩ
Rise Time29 ns
Turn-Off Delay Time102 ns
Turn-On Delay Time23 ns