공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-08-01
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2022-04-02
LTD Date2022-10-02
관련 부품
InfineonIPP045N10N3GXKSA1
MOSFET N-CH 100V 100A TO220-3 N-Channel 100 V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3
STMicroelectronicsSTP165N10F4
N-channel 100 V, 4.1 mΩ, 160 A TO-220, H²PAK STripFET͐2;2; DeepGATE͐2;2; Power MOSFET
STMicroelectronicsSTP160N75F3
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
InfineonIPP05CN10NGXKSA1
MOSFET N-CH 100V 100A TO220-3 N-Channel 100 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3
설명
유통업체에서 제공한 STMicroelectronics STP180N10F3에 대한 설명입니다.
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
315W(Tc) 20V 4V@ 250µA 114.6nC@ 10 V 1individualNChannel 100V 5.1mΩ@ 60A,10V 120A 6.665nF@25V TO-220 Through hole mounting
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.8 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time6.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.665 nF
Max Operating Temperature175 °C
Max Power Dissipation315 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation315 W
Rds On Max5.1 mΩ
Resistance5.1 MΩ
Rise Time97.1 ns
Schedule B8541290080
Turn-Off Delay Time99.9 ns
Turn-On Delay Time25.6 ns