Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0039Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 137 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 59 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 27 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 214