공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-07
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2022-11-11
LTD Date2023-05-11
관련 부품
InfineonIPP034NE7N3GXKSA1
MOSFET N-CH 75V 100A TO220-3 N-Channel 75 V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3
InfineonIPP037N08N3GXKSA1
MOSFET N-CH 80V 100A TO220-3 N-Channel 80 V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3
InfineonIPP034N08N5AKSA1
MOSFET N-CH 80V 120A TO220-3 N-Channel 80 V 120A (Tc) 167W (Tc) Through Hole PG-TO220-3
STMicroelectronicsSTP260N6F6
N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
설명
유통업체에서 제공한 STMicroelectronics STP160N75F3에 대한 설명입니다.
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
Transistor MOSFET N-CH 75V 120A 3-Pin (3+Tab) TO-220 Tube
MOSFET, N CH, 75V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:TO-220; Power Dissipation Pd:330W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.75 nF
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation330 W
Rds On Max4 mΩ
Resistance4 MΩ
Rise Time65 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time100 ns
Turn-On Delay Time22 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm