공급망
Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-17
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
관련 부품
InfineonIPP037N08N3GXKSA1
Power MOSFET, N Channel, 80 V, 100 A, 0.0028 ohm, TO-220, Through Hole
STMicroelectronicsSTP140N8F7
N-channel 80 V, 3.5 mOhm typ., 90 A STripFET F7 Power MOSFET in TO-220 package
InfineonIPP027N08N5AKSA1
Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube, PG-TO220-3, RoHS
InfineonIPP032N06N3GXKSA1
Power MOSFET, N Channel, 60 V, 120 A, 0.0026 ohm, TO-220, Through Hole
STMicroelectronicsSTP160N75F3
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
설명
유통업체에서 제공한 Infineon IPP034N08N5AKSA1에 대한 설명입니다.
Mosfet, N-Ch, 80V, 175Deg C, 167W Rohs Compliant: Yes |Infineon Technologies IPP034N08N5AKSA1
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220 Tube
OptiMOSª5Power-Transistor,80V, PG-TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 120A I(D), 80V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Ideal for high frequency switching and sync. rec
INFINEON MOSFET IPP034N08N5AKSA1
NMOS, Vds=80 V, 120A, PG-TDSON
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance3.4 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.8 nF
Max Dual Supply Voltage80 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation167 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.4 mΩ
Package Quantity500
Power Dissipation167 W
Rds On Max3.4 mΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time37 ns
Turn-On Delay Time18 ns
Dimensions
Height20.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책