공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-08-12
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2012-08-27
LTD Date2013-02-27
관련 부품
InfineonIPP032N06N3GXKSA1
MOSFET N-CH 60V 120A TO220-3 N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO220-3
InfineonIPP040N06N3GXKSA1
MOSFET N-CH 60V 90A TO220-3 N-Channel 60 V 90A (Tc) 188W (Tc) Through Hole PG-TO220-3
InfineonIPP034NE7N3GXKSA1
MOSFET N-CH 75V 100A TO220-3 N-Channel 75 V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3
STMicroelectronicsSTP160N75F3
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
STMicroelectronicsSTP80N70F6
N-channel 68 V, 0.0052 Ohm, 96 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
설명
유통업체에서 제공한 onsemi FDP040N06에 대한 설명입니다.
Trans MOSFET N-CH 60V 168A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
231W(Tc) 4.5V@ 250µA 133nC@ 10V 1individualNChannel 60V 4mΩ@ 75A,10V 8.235pF@25V TO-220-3 Through hole mounting
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.235 nF
Max Operating Temperature175 °C
Max Power Dissipation231 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation231 W
Rds On Max4 mΩ
Rise Time40 ns
Turn-Off Delay Time55 ns