가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STP11N65M5 | 675 | 1 | |||||||||
| TME | STP11N65M5 | 0 | 1 | 21h | ||||||||
| Future Electronics | STP11N65M5 | 0 | 50 | Tube | ||||||||
| Avnet | STP11N65M5 | 0 | 1K | 10h | ||||||||
| RS (Formerly Allied Electronics) | STP11N65M5 | 0 | 5 | Bulk | 1d |
관련 부품
STMicroelectronicsSTP15N65M5
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220 package
STMicroelectronicsSTP13N65M2
N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package
STMicroelectronicsSTP13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package
설명
유통업체에서 제공한 STMicroelectronics STP11N65M5에 대한 설명입니다.
N-channel 650 V, 0.43 Ohm, 9 A MDmesh(TM) V Power MOSFET in TO-220 package
N-Channel 650 V 9 A 0.48 Ohm Flange Mount MDmesh V Power Mosfet - TO-220
STP11N65M5 N-CHANNEL MOSFET TRANSISTOR, 9 A, 710 V, 3-PIN TO-220
Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220AB Tube
Mosfet, N-Ch, 650V, 9A, To-220 Rohs Compliant: Yes |Stmicroelectronics STP11N65M5
Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance644 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation85 W
Rds On Max480 mΩ
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time23 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm