공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-02-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
관련 부품
STMicroelectronicsSTP13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package
STMicroelectronicsSTP10NM60N
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package
STMicroelectronicsSTP11NM50N
N-channel 500 V, 0.4 Ohm, 8.5 A MDmesh(TM) II Power MOSFET in TO-220
설명
유통업체에서 제공한 STMicroelectronics STP10NM65N에 대한 설명입니다.
Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220 Tube
N-channel 650V - 0.43Y - 9A - TO-220/FP- IPAK - DPAKN-channel 650V - 0.43Y - 9A - TO-220/FP- IPAK - DPAKSecond generation MDmesh
Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 650V, 9A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:650V; On Resistance Rds(on):430mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:9A; Package / Case:TO-220; Power Dissipation Pd:90W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance850 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation90 W
Rds On Max480 mΩ
Resistance480 mΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time50 ns
Turn-On Delay Time12 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm