대체 부품
Price @ 1000
$ 1.335
$ 0.927
Stock
211,131
111,759
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
8 A
8 A
Threshold Voltage
3 V
4 V
Rds On Max
550 mΩ
600 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
70 W
70 W
Input Capacitance
540 pF
577 pF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-06-10
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTP11NM50N
N-channel 500 V, 0.4 Ohm, 8.5 A MDmesh(TM) II Power MOSFET in TO-220
STMicroelectronicsSTP13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package
설명
유통업체에서 제공한 STMicroelectronics STP10NM60N에 대한 설명입니다.
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package
MOSFET N-CH 600V 8A TO-220 / Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
STP10NM60N N-CHANNEL MOSFET TRANSISTOR, 10 A, 600 V, 3-PIN TO-220
N-Channel 650 V 0.55 Ohm Flange Mount MDmesh II Power MosFet - TO-220
Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:70W; No. Of Pins:3Pins; Msl:-Rohs Compliant: Yes |Stmicroelectronics STP10NM60N.
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance540 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max550 mΩ
Resistance550 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time32 ns
Turn-On Delay Time10 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm