공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-22
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2020-10-25
LTD Date2021-04-25
관련 부품
InfineonIRF6717MTRPBF
Trans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R / MOSFET N-CH 25V 38A DIRECTFET
InfineonIRF6729MTR1PBF
Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTH300NH02L-6
Mosfet, N-Ch, 24V, 180A, H2Pak-6 Rohs Compliant: Yes |Stmicroelectronics STH300NH02L-6
STMicroelectronicsSTV300NH02L
STV300NH02L N-CHANNEL MOSFET TRANSISTOR, 280 A, 24 V, 10-PIN POWERSO
설명
유통업체에서 제공한 STMicroelectronics STL160N3LLH6에 대한 설명입니다.
N-channel 30 V, 0.0011 Ohm typ., 45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package
MOSFET 30V 13mOhm 35A PwFLAT5x6 RoHSconf
Trans MOSFET N-CH 30V 240A 8-Pin Power Flat T/R
35 A 30 V 0.002 ohm N-CHANNEL Si POWER MOSFET
MOSFET N-Ch 30V 0.0011 Ohm 35A STripFET VI
Power Field-Effect Transistor, 35A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 160A POWERFLAT56
MOSFET, N CH, 30V, 160A, POWERFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerFLAT; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:160A
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
MountSurface Mount
Number of Terminals5
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time54 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.375 nF
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation80 W
Rds On Max1.3 mΩ
Resistance1.3 MΩ
Rise Time32 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time107.5 ns
Turn-On Delay Time18.5 ns
Dimensions
Height880 µm
Length4.75 mm
Width5.75 mm