대체 부품
Price @ 1000
$ 1.49
$ 2.98
Stock
912,779
164,652
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
-
L
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
38 A
38 A
Threshold Voltage
-
1.8 V
Rds On Max
1.25 mΩ
1.25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.8 W
2.8 W
Input Capacitance
6.75 nF
6.75 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-07
Lifecycle StatusNRND (Last Updated: 3 months ago)
관련 부품
InfineonIRF6797MTRPBF
MOSFET N-CH 25V 36A DIRECTFET-MX / Trans MOSFET N-CH Si 25V 36A 7-Pin Direct-FET MX T/R
InfineonIRF6716MTRPBF
MOSFET N-CH 25V 39A DIRECTFET / Trans MOSFET N-CH Si 25V 39A 7-Pin Direct-FET MX T/R
STMicroelectronicsSTL220N3LLH7
N-channel 30 V, 0.00081 Ohm typ., 220 A STripFET H7 Power MOSFET in a PowerFLAT 5x6 package
STMicroelectronicsSTL260N3LLH6
N-channel 30 V, 0.0011 Ohm typ., 260 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package
설명
유통업체에서 제공한 Infineon IRF6717MTRPBF에 대한 설명입니다.
Trans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R / MOSFET N-CH 25V 38A DIRECTFET
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N CH MOSFET, 25V, 38A, DIRECTFET MX; Tra; N CH MOSFET, 25V, 38A, DIRECTFET MX; Transistor Polarity:(Not Available); Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.8V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.25 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.75 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation96 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance1.25 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max1.25 mΩ
Rise Time37 ns
Schedule B8541290080
Turn-Off Delay Time19 ns
Turn-On Delay Time25 ns
Dimensions
Height700 µm
Length6.35 mm
Width5.05 mm