관련 부품
LittelfuseIXXH40N65B4
Trench Series - 650V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs, TO-247, RoHS
STMicroelectronicsSTGW40H65FB
IGBT 650V 80A 283W TO247 / IGBT Trench Field Stop 650 V 80 A 283 W Through Hole TO-247-3
설명
유통업체에서 제공한 STMicroelectronics STGWA80H65FB에 대한 설명입니다.
Trans IGBT Chip N-CH 650V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
Igbt |Stmicroelectronics STGWA80H65FB
IGBT TRENCH FS 650V 120A TO247
469W 1.6V 650V 120A TO-247 15.8mm*5mm*21mm
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current120 A
Max Operating Temperature175 °C
Max Power Dissipation469 W
Min Operating Temperature-55 °C