Infineon IHW30N110R3FKSA1

1100 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

IHW30N110R3 Series 1100 V 30 A Through Hole Reverse conducting IGBT-PG-TO247-3

IGBT, SINGLE, N CH, 1.1KV, 60A, TO-247-3; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:1.1kV; Transistor Case Style:TO-247; N

The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications