가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | STFI13NK60Z | 1,223 | 600 | Tube | 6h | |||||||
| Win Source | WS-STFI13NK60Z | 4,760 | 25 | 14h | ||||||||
| Worldway Electronics | STFI13NK60Z | 28,177 | 7 | Tube | 13h | |||||||
| Utmel Electronic | 2381-STFI13NK60Z | 1,500 | Tube | 23h | ||||||||
| Lixinc | STFI13NK60Z | 11,245 | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-22
LTD Date2018-12-22
관련 부품
onsemiFQI12N60CTU
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
STMicroelectronicsSTFI10NK60Z
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in I2PAKFP package
onsemiFQI12N60TU
MOSFET N-CH 600V 10.5A I2PAK / Trans MOSFET N-CH 600V 10.5A 3-Pin(3+Tab) I2PAK Rail
설명
유통업체에서 제공한 STMicroelectronics STFI13NK60Z에 대한 설명입니다.
N-channel 600 V, 0.48 Ohm, 13 A, Zener-protected SuperMESH(TM) Power MOSFET in I2PAKFP package
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) I2PAK FP Tube
Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Ch 600V 0.48 Ohm 13A SuperMESH
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time21 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.03 nF
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation35 W
Rds On Max550 mΩ
Rise Time14 ns
Turn-Off Delay Time61 ns
Turn-On Delay Time22 ns