가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | STFI10NK60Z | 2,400 | 600 | Tube | 7h | |||||||
| Win Source | WS-STFI10NK60Z | 4,000 | 30 | 16h | ||||||||
| Worldway Electronics | STFI10NK60Z | 29,824 | 7 | Tube | 15h | |||||||
| Utmel Electronic | 2381-STFI10NK60Z | 1,327 | Tube | 35m | ||||||||
| Lixinc | STFI10NK60Z | 12,980 | 1d |
관련 부품
STMicroelectronicsSTFI13NK60Z
N-channel 600 V, 0.48 Ohm, 13 A, Zener-protected SuperMESH(TM) Power MOSFET in I2PAKFP package
STMicroelectronicsSTB10NK60Z-1
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
onsemiFQI12N60CTU
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
onsemiFQI12N60TU
MOSFET N-CH 600V 10.5A I2PAK / Trans MOSFET N-CH 600V 10.5A 3-Pin(3+Tab) I2PAK Rail
STMicroelectronicsSTFI10N62K3
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
설명
유통업체에서 제공한 STMicroelectronics STFI10NK60Z에 대한 설명입니다.
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in I2PAKFP package
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) I2PAK FP Tube
10 A 600 V 0.75 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Ch 600V 0.65 Ohm 10A SuperMESH
TRANS SUPERMESH PWR MOSFET N-CH 600V I2PAKFP
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.37 nF
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation35 W
Rds On Max750 mΩ
Rise Time20 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns