관련 부품
STMicroelectronicsSTB10NK60Z-1
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
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Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 onsemi FCI11N60에 대한 설명입니다.
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAK Rail
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 600V 11A I2PAK
MOSFETs 600V, NCH, MOSFET
600V N-Channel SuperFET
TEW CREATED FOR SUZHOU <AZ
MISCELLANEOUS MOSFETS;
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- SCG
- ON Semiconductor Cor
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- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
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- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.49 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max380 mΩ
Rise Time98 ns
Turn-Off Delay Time119 ns
Voltage Rating (DC)600 V