가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | STD6NF10T4 | 0 | 1 | 22h | ||||||||
| RS (Formerly Allied Electronics) | STD6NF10T4 | 0 | 5 | Bulk | 17h | |||||||
| element14 APAC | STD6NF10T4 | 0 | 1 | Cut Tape | 14h | |||||||
| Farnell | STD6NF10T4 | 0 | 1 | Cut Tape | 1d | |||||||
| Win Source | WS-STD6NF10T4 | 72,632 | 55 | 1h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-07-27
LTD Date2025-01-27
관련 부품
onsemiIRLR120ATF
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 35W 9ns
STMicroelectronicsSTD10NF10T4
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
STMicroelectronicsSTD15NF10T4
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
설명
유통업체에서 제공한 STMicroelectronics STD6NF10T4에 대한 설명입니다.
N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET
STD6NF10T4 N-CHANNEL MOSFET TRANSISTOR, 6 A, 100 V, 3-PIN TO-252
Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 100V, 6A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 30W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Mosfet, N Channel, 100V, 6A, Dpak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:3A; Tensión Drenaje-Fuente Vds:100V; Resistencia De Activación Rds(On):220Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STD6NF10T4
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance280 pF
Max Operating Temperature175 °C
Max Power Dissipation30 W
Min Breakdown Voltage100 V
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation30 W
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)100 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm