가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STD4NK100Z | 2,500 | 2500 | 1d | ||||||||
| Newark | STD4NK100Z | 4,681 | 1 | Cut Tape | ||||||||
| DigiKey | 497-16035-1-ND | 5,055 | 1 | Cut Tape | ||||||||
| Future Electronics | STD4NK100Z | 0 | 2500 | Tape & Reel | ||||||||
| Arrow Electronics | STD4NK100Z | 0 | 2500 |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-09
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTD3NK100Z
N-channel 1000 V, 5.4 Ohm, 2.5 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTD2NK100Z
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in DPAK package
STMicroelectronicsSTD2NK90ZT4
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
설명
유통업체에서 제공한 STMicroelectronics STD4NK100Z에 대한 설명입니다.
Power MOSFET, N Channel, 1 kV, 2.2 A, 6.8 Ohm, TO-252 (DPAK), 3 Pins, Surface Mount
Trans MOSFET N-CH 1KV 2.2A Automotive 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 2.2A I(D), 1000V, 6.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, AECQ101, N-CH, 1KV, 2.2A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.2A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 5.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: SuperMESH Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance6.8 Ω
Drain to Source Voltage (Vdss)1 kV
Gate to Source Voltage (Vgs)30 V
Input Capacitance601 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation90 W
Rds On Max6.8 Ω
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time15 ns
Dimensions
Height2.63 mm