가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STD2NK90ZT4 | 25,000 | 2500 | 7h | ||||||||
| Newark | STD2NK90ZT4 | 1,180 | 1 | |||||||||
| Verical | STD2NK90ZT4 | 10,000 | 2500 | |||||||||
| Arrow Electronics | STD2NK90ZT4 | 10,000 | 2500 | |||||||||
| Future Electronics | STD2NK90ZT4 | 87,500 | 2500 | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-05
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTD3NK80ZT4
N-CHANNEL 800V - 3.8 Ohm - 2.5A DPAK Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronicsSTD3NK90ZT4
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package
STMicroelectronicsSTD2NK100Z
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in DPAK package
설명
유통업체에서 제공한 STMicroelectronics STD2NK90ZT4에 대한 설명입니다.
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
STD2NK90ZT4 N-channel MOSFET Transistor, 2.1 A, 900 V, 3-Pin DPAK
N-Channel 900 V 6.5 Ohm SMT Zener-Protect SuperMESH MosFet TO-252-3
Trans MOSFET N-CH 900V 2.1A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 900V 2.1A DPAK
Power MOSFET, N Channel, 900 V, 2.1 A, 5 ohm, TO-252 (DPAK), Surface Mount
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in DPAK package
Ciiva
N-CHANNEL 900V-5 OHM-2.1A-DPAK ZENER-PROTECTED SUPER MESH MOSFET Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 900V, 2.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.1A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; P
The SuperMESH(TM) series is obtained through an extreme optimization of ST's well established strip based PowerMESH(TM) layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh(TM) products.
제조업체 별칭
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- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2.1 A
Current Rating2.1 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance6.5 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance485 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation70 W
Rds On Max6.5 Ω
Resistance6.5 Ω
Rise Time11 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time43 ns
Turn-On Delay Time21 ns
Voltage Rating (DC)900 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm