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Price @ 1000
$ 0.747
$ 0.581
Stock
456,004
597,229
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
900 V
900 V
Continuous Drain Current (ID)
1.7 A
1.7 A
Threshold Voltage
-
-
Rds On Max
7.2 Ω
7.2 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
500 pF
500 pF
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTD2NK90ZT4
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
STMicroelectronicsSTD3NK90ZT4
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package
STMicroelectronicsSTD4NK80ZT4
N-CHANNEL 800V - 3 OHM - 3A DPAK Zener-Protected SuperMESH(TM) Power MOSFET
설명
유통업체에서 제공한 onsemi FQD2N90TM에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 900 V, 1.7 A, 7.2 Ω, DPAK
TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-252AA
Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
2.5W(Ta)，50W(Tc) 30V 5V@ 250µA 15nC@ 10 V 1individualNChannel 900V 7.2Ω@ 850mA,10V 1.7A 500pF@25V TO-252AA SMD mount 2.52mm(height)
MOSFET, N-CH, 900V, 1.7A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 5.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)1.7 A
Current Rating1.7 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance7.2 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance500 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max7.2 Ω
Rise Time35 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)900 V
Dimensions
Height2.517 mm