가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STD1NK80ZT4 | 882,500 | 2500 | 12h | ||||||||
| Newark | STD1NK80ZT4 | 434 | 1 | Cut Tape | ||||||||
| Verical | STD1NK80ZT4 | 2,500 | 2500 | |||||||||
| Arrow Electronics | STD1NK80ZT4 | 2,544 | 1 | |||||||||
| TME | STD1NK80ZT4 | 1,959 | 1 | 23h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-14
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTD3NK80ZT4
N-CHANNEL 800V - 3.8 Ohm - 2.5A DPAK Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronicsSTD1NK60T4
Power MOSFET, N Channel, 600 V, 500 mA, 8.5 ohm, TO-252 (DPAK), Surface Mount
onsemiFQD2N60CTF
Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 STMicroelectronics STD1NK80ZT4에 대한 설명입니다.
N-channel 800 V, 13 Ohm typ., 1 A SuperMESH Zener protected Power MOSFET in a DPAK package
STD1NK80ZT4 N-channel MOSFET Transistor, 1 A, 800 V, 3-Pin DPAK
Power MOSFET, N Channel, 800 V, 1 A, 16 Ohm, TO-252 (DPAK), 3 Pins, Surface Mount
MOSFET N-CH 800V 1A DPAK / Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R
Power MOSFET Transistors N-Ch 800 V 13 Ohms 1 A SuperMESH
N-CHANNEL 800V-13 OHM-1A DPAK ZENER-PROTECTED SUPERMESH MOSFET Power Field-Effect Transistor, 1A I(D), 800V, 16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 800V, 1A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:800V; On Resistance Rds(on):13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Di
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)1 A
Current Rating1 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance16 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance160 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation45 W
Manufacturer Package IdentifierTO-252-P032P
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation45 W
Rds On Max16 Ω
Resistance16 Ω
Rise Time30 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)800 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm