가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STD1NK60T4 | 30,000 | 2500 | 6d | ||||||||
| Future Electronics | STD1NK60T4 | 2,500 | 2500 | Tape & Reel | ||||||||
| Newark | STD1NK60T4 | 36,552 | 5 | Cut Tape | ||||||||
| Arrow Electronics | STD1NK60T4 | 15,000 | 2500 | |||||||||
| Verical | STD1NK60T4 | 2,500 | 2500 |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTD1HN60K3
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package
설명
유통업체에서 제공한 STMicroelectronics STD1NK60T4에 대한 설명입니다.
Power MOSFET, N Channel, 600 V, 500 mA, 8.5 ohm, TO-252 (DPAK), Surface Mount
STD1NK60T4 N-CHANNEL MOSFET TRANSISTOR, 1 A, 600 V, 3-PIN DPAK
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 1A DPAK
N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK package
Ciiva
Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 600V, 1A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dis
Mosfet, N Channel, 600V, 1A, Dpak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:500Ma; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):8Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STD1NK60T4
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)1 A
Current Rating1 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance8.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance156 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation30 W
Manufacturer Package IdentifierTO-252-P032P
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation30 W
Rds On Max8.5 Ω
Resistance8.5 Ω
Rise Time5 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time19 ns
Turn-On Delay Time6.5 ns
Voltage Rating (DC)600 V
Dimensions
Height2.63 mm
Length6.6 mm
Width6.2 mm