onsemi FQD2N60CTF

Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
$ 0.509
Obsolete

가격 및 재고

데이터시트 및 문서

onsemi FQD2N60CTF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet9 페이지21년 전

onsemi

HQonline

DigiKey

Fairchild Semiconductor

재고 내역

3개월간의 트렌드:
+0.00%

공급망

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-07-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-03-02
LTD Date2011-09-02

관련 부품

STMicroelectronicsSTD2LN60K3
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package
Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - TO-252
Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - DPAK (TO-252)
STMicroelectronicsSTD2HNK60Z
N-channel 600 V - 4.4 Ω - 2 A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™2; Power MOSFET
N-Channel Power MOSFET, QFET®, 600 V, 2.4 A, 3.4 Ω, DPAK
STMicroelectronicsSTD3NK50ZT4
N-CHANNEL 500V - 2.8 Ohm - 2.3A Zener-Protected SuperMESH MOSFET

설명

유통업체에서 제공한 onsemi FQD2N60CTF에 대한 설명입니다.

Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel QFET® MOSFET 600V, 1.9A, 4.7Ω
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:1.9mA; On Resistance, Rds(on):3.6ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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