공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
관련 부품
InfineonIRF1503SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 75A;D2Pak;PD 200W;VGS +/-20
STMicroelectronicsSTB80NF03L-04T4
N-Channel 30V - 0.0035Ohm - 80A - D2PAK STripFET (TM) II POWER MOSFET
STMicroelectronicsSTB155N3LH6
N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
STMicroelectronicsSTB95N3LLH6
N-channel 30 V, 3.7 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
InfineonIRF3709STRLPBF
MOSFET N-CH 30V 90A D2PAK / Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK T/R
InfineonIRF3709SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 6.4Milliohms;ID 90A;D2Pak;PD 120W;VGS +/-20
설명
유통업체에서 제공한 Infineon IRF1503STRLPBF에 대한 설명입니다.
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 30V 190A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):3.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.73 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max3.3 mΩ
Rise Time130 ns
Turn-Off Delay Time59 ns
Turn-On Delay Time17 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm