관련 부품
STMicroelectronicsSTB80NF03L-04T4
N-Channel 30V - 0.0035Ohm - 80A - D2PAK STripFET (TM) II POWER MOSFET
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 75A;D2Pak;PD 200W;VGS +/-20
설명
유통업체에서 제공한 STMicroelectronics STB100NF03L-03T4에 대한 설명입니다.
N-channel 30 V, 0.0026 Ohm typ., 100 A StripFET(TM) II Power MOSFET in a D2PAK package
Trans MOSFET N-CH 30V 100A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 100A D2PAK
300W(Tc) 16V 2.5V@ 250¦ÌA 88nC@ 5 V 1N 30V 3.2m¦¸@ 50A,10V 100A 6.2nF@25V D2PAK 4.6mm
Power Field-Effect Transistor, 100A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 30V, 100A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Po
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- SGS THOMSON
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- ST MICROELECTRONIC
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- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)100 A
Current Rating100 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time95 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance6.2 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation300 W
Rds On Max3.2 mΩ
Resistance3.2 MΩ
Rise Time315 ns
Threshold Voltage1.7 V
Turn-Off Delay Time115 ns
Turn-On Delay Time35 ns
Voltage Rating (DC)30 V