가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | STB28N60M2 | 2,000 | 1K | |||||||||
| Verical | STB28N60M2 | 2,000 | 1K | |||||||||
| TME | STB28N60M2-STM-0 | 2,000 | 1K | 13h | ||||||||
| DigiKey | 497-14972-1-ND | 1,905 | 1 | Cut Tape | ||||||||
| Future Electronics | STB28N60M2 | 0 | 1K | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-13
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTB33N60DM2
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
VishaySIHB28N60EF-GE3
MOSFET N-CH 600V 28A D2PAK / N-Channel 600 V 28A (Tc) 250W (Tc) Surface Mount D2PAK
STMicroelectronicsSTB26NM60ND
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
VishaySIHB23N60E-GE3
MOSFET N-CH 600V 23A D2PAK / N-Channel 600 V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
STMicroelectronicsSTB20N65M5
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package
InfineonIPB65R125C7ATMA1
MOSFET N-CH 650V 18A D2PAK / N-Channel 650 V 18A (Ta) 101W (Tc) Surface Mount PG-TO263-3
설명
유통업체에서 제공한 STMicroelectronics STB28N60M2에 대한 설명입니다.
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
N-Channel 600 V 22 A 0.15 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK
Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
170W(Tc) 25V 4V@ 250¦ÌA 36nC@ 10 V 1N 600V 150m¦¸@ 11A,10V 22A 1.44nF@100V D2PAK
Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.44 nF
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Rds On Max150 mΩ
Rise Time7.2 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time14.5 ns