가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIHB28N60EF-GE3-ND | 1,081 | 1 | Tube | ||||||||
| TTI | SIHB28N60EF-GE3 | 1,000 | 50 | Tube | 15h | |||||||
| TME | SIHB28N60EF-GE3 | 0 | 1 | 1h | ||||||||
| Future Electronics | SIHB28N60EF-GE3 | 0 | 50 | Tube | ||||||||
| Avnet | SIHB28N60EF-GE3 | 0 | 1K | 3d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-11-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySIHB33N60E-GE3
Power MOSFET, N Channel, 600 V, 33 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount
VishaySIHB33N60EF-GE3
600V 33A 98m´Î@10V16.5A 278W 4V@250Ã×A N Channel D2PAK(TO-263) MOSFETs ROHS
STMicroelectronicsSTB40N60M2
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package
VishaySIHB23N60E-GE3
MOSFET N-CH 600V 23A D2PAK / N-Channel 600 V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
STMicroelectronicsSTB42N60M2-EP
N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package
설명
유통업체에서 제공한 Vishay SIHB28N60EF-GE3에 대한 설명입니다.
MOSFET N-CH 600V 28A D2PAK / N-Channel 600 V 28A (Tc) 250W (Tc) Surface Mount D2PAK
Vishay NMOS EF Series, Vds=600 V, 28 A, D2PAK (TO-263), , 3
600V, 28A, 0.123 OHM, D2PAK EF SERIES
MOSFET 600V 28A w/Fast Diode D2PAK
RS APAC
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
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기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.946308 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Resistance123 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.714 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max123 mΩ
Rise Time40 ns
Turn-Off Delay Time82 ns
Turn-On Delay Time24 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm