STMicroelectronics STB33N60DM2

N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package

MOSFET N-CH 600V 24A D2PAK / N-Channel 600 V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600 V 130 mOhm Surface Mount DM2 Power Mosfet - D2PAK

190W(Tc) 25V 5V@ 250¦ÌA 43nC@ 10 V 1N 600V 130m¦¸@ 12A,10V 24A 1.87nF@100V D2PAK,TO-263

MOSFET, N-CH, 600V, 24A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB