대체 부품
Price @ 1000
$ 2.626
$ 2.9
Stock
189,617
171,154
Authorized Distributors
5
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vds)
500 V
500 V
Continuous Drain Current (ID)
20 A
20 A
Threshold Voltage
-
-
Rds On Max
250 mΩ
250 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
192 W
192 W
Input Capacitance
1.48 nF
1.38 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
VishaySIHB22N60E-GE3
MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTB24N60M2
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in D2PAK package
VishaySIHB15N60E-GE3
Vishay NChannelMOSTube, Vds=600 V, 15 A, D2PAK （TO-263）encapsulation, surface mount
설명
유통업체에서 제공한 STMicroelectronics STB20NM50T4에 대한 설명입니다.
N-channel 500 V, 0.20 Ohm typ., 20 A MDmesh(TM) Power MOSFET in D2PAK package
N-Channel 550 V 0.25 Ohm Surface Mount Zener Protect SuperMesh MosFet - D2PAK
Trans MOSFET N-CH 500V 20A 3-Pin (2+Tab) D2PAK T/R
Mosfet, N-Ch, 500V, 20A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STB20NM50T4
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vds)500 V
Element ConfigurationSingle
Fall Time8.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.48 nF
Max Operating Temperature150 °C
Max Power Dissipation192 W
Min Breakdown Voltage500 V
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation192 W
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time16 ns
Turn-Off Delay Time9 ns
Turn-On Delay Time24 ns
Voltage Rating (DC)550 V
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant