가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIHB15N60E-GE3-ND | 1,240 | 1 | Bulk | ||||||||
| TTI | SIHB15N60E-GE3 | 4,000 | 1K | Tube | 12h | |||||||
| TME | SIHB15N60E-GE3 | 0 | 1 | 22h | ||||||||
| Newark | SIHB15N60E-GE3 | 0 | 1 | |||||||||
| Avnet | SIHB15N60E-GE3 | 0 | 1K | 3d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-01-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTB24N60M2
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in D2PAK package
STMicroelectronicsSTB18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in D2PAK package
VishayIRFS11N50APBF
Power MOSFET, N Channel, 500 V, 11 A, 0.52 ohm, TO-263 (D2PAK), Surface Mount
설명
유통업체에서 제공한 Vishay SIHB15N60E-GE3에 대한 설명입니다.
Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK
MOSFET, N CH, 600V, 15A, TO-263-3
Vishay NMOS, Vds=600 V, 15 A, D2PAK £¨TO-263
Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
D2pak/To-263 Rohs Compliant: No
MOSFET, N CH, 600V, 15A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:180W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
제조업체 별칭
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기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time66 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.35 nF
Max Operating Temperature150 °C
Max Power Dissipation180 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation180 W
Rds On Max280 mΩ
Resistance280 mΩ
Rise Time77 ns
Threshold Voltage2 V
Turn-Off Delay Time35 ns
Turn-On Delay Time17 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm