가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STB200NF04T4 | 0 | 1 | 1d | ||||||||
| Microchip USA | STB200NF04T4 | 179 | 600 | Tray | 22h | |||||||
| Win Source | WS-STB200NF04T4 | 4,500 | 22 | 6h | ||||||||
| Worldway Electronics | STB200NF04T4 | 28,288 | 7 | Tape & Reel | 5h | |||||||
| Aztech | STB200NF04T4 | 8,872 | 1h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-09
LTD Date2019-02-09
관련 부품
STMicroelectronicsSTB100NF04T4
N-channel 40 V, 0.0043 Ohm typ., 120 A StripFET II Power MOSFET in D2PAK package
InfineonIRF1404ZSTRLPBF
In a Pack of 5, N-Channel MOSFET, 190 A, 40 V, 3-Pin D2PAK Infineon IRF1404ZSPBF
STMicroelectronicsSTB85NF3LLT4
N-Channel 30V - 0.006Ohm - 85A - D2PAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
설명
유통업체에서 제공한 STMicroelectronics STB200NF04T4에 대한 설명입니다.
STB200NF04T4 N-channel MOSFET Transistor, 120 A, 40 V, 3-Pin D2PAK
N-Channel 40 V 3.7 mOhm Surface Mount STripFET II Mosfet - D2PAK
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
MOSFET, N-CH, 40V, 120A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Current Rating120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.1 nF
Max Operating Temperature175 °C
Max Power Dissipation310 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation310 W
Rds On Max3.7 mΩ
Resistance3.7 MΩ
Rise Time320 ns
Turn-Off Delay Time140 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)40 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm